aug. 1999 pin configuration mitsubishi semiconductor m54563p/fp 8-unit 500ma source type darlington transistor array with clamp diode description m54563fp is an eight-circuit output-sourcing darlington transistor array. the circuits are made of pnp and npn tran- sistors. this semiconductor integrated circuit performs high- current driving with extremely low input-current supply. features high breakdown voltage (bv ceo 3 50v) high-current driving (io(max) = C500ma) with clamping diodes driving available with pmos ic output of 6 ~ 16v or with ttl output wide operating temperature range (ta = C20 to +75 c) output current-sourcing type application drives of relays, printers, leds, fluorescent display tubes and lamps, and interfaces between mos-bipolar logic sys- tems and relays, solenoids, or small motors function the m54563p and m54563fp each have eight circuits, which are made of input inverters and current-sourcing out- puts. the outputs are made of pnp transistors and npn darlington transistors. the pnp transistor base current is constant. a clamping diode is provided between each output and gnd. v s and gnd are used commonly among the eight circuits. the inputs have resistance of 3k w , and voltage of up to 10v is applicable. output current is 500 ma maximum. supply voltage v s is 50v maximum. the m54563fp is enclosed in a molded small flat package, enabling space-saving design. circuit diagram 1.5k 7.2k 3k 3k 20k v s gnd input output the diode, indicated with the dotted line, is parasitic, and cannot be used. unit : w the eight circuits share the v s and gnd. 1 in1 ? in2 ? in3 ? in4 ? in5 ? in6 ? in7 ? gnd ? o8 in8 ? v s gnd v s 2 3 4 5 6 7 8 9 18 17 16 15 14 13 12 11 10 ? o7 ? o6 ? o5 ? o4 ? o3 ? o2 ? o1 ? ? ? ? ? ? ? y ? ? ? ? ? ? ? t ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 1 nc in1 ? in2 ? in3 ? in4 ? in5 ? in6 ? ? o8 in7 ? in8 ? 2 3 4 5 6 7 8 9 20 19 18 17 16 15 14 13 12 10 11 ? o7 ? o6 ? o5 ? o4 ? o2 ? o3 ? o1 nc ? ? ? ? ? ? ? y ? ? ? ? ? ? ? t ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? nc : no connection package type 18p4g(p) input output input output package type 20p2n-a(fp)
aug. 1999 min typ max absolute maximum ratings (unless otherwise noted, ta = C20 ~ +75 c) mitsubishi semiconductor m54563p/fp 8-unit 500ma source type darlington transistor array with clamp diode m a ma v m a i s (leak) # i s v f i r # 0 2.4 0 v s v ih v il C0.5 ~ +50 50 C0.5 ~ +10 C500 C500 50 1.79(p)/1.10(fp) C20 ~ +75 C55 ~ +125 v ceo # v s v i i o i f v r # p d t opr t stg v v v ma ma v w c c v v v 50 10 0.2 parameter limits symbol unit i o 0 0 C350 C100 ma v ma v ce (sat) i i 100 2.4 2.0 1.0 5.0 15.0 C2.4 100 v s = 50v, v i = 0.2v v s = 10v, v i = 2.4v, i o = C350ma v s = 10v, v i = 2.4v, i o = C100ma v i = 3v v i = 10v v s = 50v, v i = 3v (all input) i f = C350ma v r = 50v symbol unit parameter test conditions limits min typ + max 1.6 1.45 0.6 2.9 5.6 C1.2 absolute maximum ratings (unless otherwise noted, ta = C20 ~ +75 c) ratings unit symbol parameter conditions collector-emitter voltage supply voltage input voltage output current clamping diode forward current clamping diode reverse voltage power dissipation operating temperature storage temperature output, l current per circuit output, h ta = 25 c, when mounted on board # : unused i/o pins must be connected to gnd. supply voltage duty cycle p : no more than 8% fp : no more than 5% duty cycle p : no more than 55% fp : no more than 30% output current (current per 1 cir- cuit when 8 circuits are coming on si- multaneously) h input voltage l input voltage + : the typical values are those measured under ambient temperature (ta) of 25 c. there is no guarantee that these values are obtained under any conditions. # : unused i/o pins must be connected to gnd. supply leak current supply current clamping diode forward voltage clamping diode reverse current collector-emitter saturation voltage input current ns ns t on t off 100 4800 symbol unit parameter test conditions limits min typ max turn-on time turn-off time c l = 15pf (note 1) switching characteristics (unless otherwise noted, ta = 25 c) recommended operating conditions (unless otherwise noted, ta = C20 ~ +75 c) electrical characteristics (unless otherwise noted, ta = C20 ~ +75 c)
aug. 1999 timing diagram note 1 test circuit mitsubishi semiconductor m54563p/fp 8-unit 500ma source type darlington transistor array with clamp diode pg 50 w c l r l v s input output (1) pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, z o = 50 w v i = 0 to 2.4v (2) input-output conditions : r l = 30 w , v s = 10v (3) electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes measured device ton 50% 50% 50% 50% toff input output typical characteristics thermal derating factor characteristics ambient temperature ta (?) m54563fp m54563p power dissipation pd (w) 0 0 0.5 1.0 1.5 2.0 25 50 75 100 output saturation voltage output current characteristics output saturation voltage v ce (sat) (v) 0 ?00 ?00 ?00 ?00 ?00 0 0.5 1.0 1.5 2.0 2.5 output current i o (ma) v s = 10v v i = 2.4v ta = 75? ta = 25? ta = ?0? duty-cycle-output current characteristics (m54563p) duty cycle (%) a ? ? ? ? ? output current i o (ma) 0 ?00 ?00 ?00 ?00 ?00 0 20 40 60 80 100 ? ? ? ? duty cycle (%) a ? output current i o (ma) duty-cycle-output current characteristics (m54563p) 0 ?00 ?00 ?00 ?00 ?00 0 20 40 60 80 100 ?he output current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 25? ?he output current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 75?
aug. 1999 mitsubishi semiconductor m54563p/fp 8-unit 500ma source type darlington transistor array with clamp diode duty-cycle-output current characteristics (m54563fp) duty cycle (%) a ? ? ? ? ? output current i o (ma) 0 ?00 ?00 ?00 ?00 ?00 0 20 40 60 80 100 ? ? ? ? duty cycle (%) a ? output current i o (ma) duty-cycle-output current characteristics (m54563fp) 0 ?00 ?00 ?00 ?00 ?00 0 20 40 60 80 100 0 ta = 75? ta = 25? ta = ?0? ?00 ?00 ?00 ?00 ?00 0 0.2 0.4 0.6 0.8 1.0 v s = 20v v s -v o = 4v grounded emitter transfer characteristics input voltage v i (v) output current i o (ma) ta = 75? ta = 25? ta = ?0? clamping diode characteristics forward bias voltage v f (v) 0 100 200 300 500 400 0 0.5 1.0 1.5 2.0 forward bias current i f (ma) input characteristics input voltage v i (v) 0 ta = 75? ta = 25? ta = ?0? 2 1 3 4 5 0 246810 input current i i (ma) v s = 20v input characteristics input voltage v i (v) 0 ta = 75? ta = 25? ta = ?0? 0.4 0.2 0.6 0.8 1.0 0 12345 input current i i (ma) v s = 20v ?he output current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 25? ?he output current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 75?
|
